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november 2011 doc id 022321 rev 1 1/12 12 STN1NF20 n-channel 200 v, 1.1 , 1 a sot-223 stripfet? ii power mosfet features 100% avalanche tested low gate charge exceptional dv /dt capability applications switching applications description this power mosfet has been developed using stmicroelectronics? unique stripfet? process, which is specifically desi gned to minimize input capacitance and gate charge. this renders the device suitable for use as primary switch in advanced high-efficiency isolated dc-dc converters for telecom and computer applications, and applications with low gate charge driving requirements. figure 1. internal schematic diagram order code v dss r ds(on) max i d STN1NF20 200 v < 1.5 1 a sot-223 1 2 4 3 !-v $ ' 3 table 1. device summary order code marking package packaging STN1NF20 1nf20 sot-223 tape and reel www.st.com
contents STN1NF20 2/12 doc id 022321 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STN1NF20 electrical ratings doc id 022321 rev 1 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 20 v i d drain current continuous t amb = 25 c 1 a i d drain current continuous t amb = 100 c 1 a i dm (1) 1. pulse width limited by safe operating area. drain current pulsed 4 a p tot total dissipation at t amb = 25 c 2 w dv/dt (2) 2. isd 1 a, di/dt 200 a/s, v dd 80% v (br)dss. peak diode recovery voltage slope 10 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-amb thermal resistance junction to ambient 62.50 c/w table 4. thermal data symbol parameter value unit i ar avalanche current, repetetive or not repetetive (1) 1. pulse width limited by t jmax. 1a e as single pulse avalanche energy (2) 2. starting t j = 25 c, i d = i ar , v dd = 50 v. 70 mj
electrical characteristics STN1NF20 4/12 doc id 022321 rev 1 2 electrical characteristics (tcase = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = 200 v v ds = 200 v, t c =125 c 1 50 a a i gss gate-body leakage current v gs = 20 v, v ds =0 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 0.5 a 1.1 1.5 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 90 30 4 - pf pf pf r g instrinsic gate resistance f=1 mhz open drain - 4.8 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 160 v, i d = 1 a, v gs = 10 v (see figure 14 ) - 5.7 1.1 3.0 - nc nc nc
STN1NF20 electrical characteristics doc id 022321 rev 1 5/12 table 7. switching times symbol parameter test conditions min. typ. max unit t d(v) t r t f t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 100 v, i d = 0.5 a, r g = 4.7 , v gs = 10 v (see figure 13 ) - 4 5.6 12.4 15.8 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 1 4 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 1 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1 a, di/dt = 100 a/s v dd = 20 v (see figure 15 ) - 51.8 90.7 3.5 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1 a, di/dt = 100 a/s v dd = 20 v, t j = 150 c (see figure 15 ) - 58.0 106.7 3.7 ns nc a
electrical characteristics STN1NF20 6/12 doc id 022321 rev 1 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 1 0.1 0.01 0.001 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am10 3 7 8 v1 i d 3 2 1 0 0 8 v d s (v) 16 (a) 4 12 4 5 5v 6v 7v v g s =10v am10 3 79v1 i d 3 2 1 0 0 4 v g s (v) 8 (a) 2 6 4 5 v d s =20v am10 38 0v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.90 0.94 0.9 8 1.02 1.06 1.10 i d =1ma am10 38 1v1 r d s (on) 1.14 1.12 1.10 1.0 8 0 1 i d (a) ( ) 0.5 1.16 v g s =10v am10 38 2v1
STN1NF20 electrical characteristics doc id 022321 rev 1 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 1 q g (nc) (v) 4 8 2 3 10 v dd =160v i d =1a 5 12 60 40 20 0 8 0 100 v d s 6 120 140 160 v d s (v) am10 383 v1 c 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am10 38 4v1 v g s (th) 1.05 0.95 0. 8 5 0.75 -50 0 t j (c) (norm) -25 75 25 50 100 1.00 0.90 0. 8 0 i d =250 a am10 38 5v1 r d s (on) 1.6 1.2 0. 8 0.4 -50 0 t j (c) (norm) -25 75 25 50 100 2.0 am10 38 6v1
test circuits STN1NF20 8/12 doc id 022321 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STN1NF20 package mechanical data doc id 022321 rev 1 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STN1NF20 10/12 doc id 022321 rev 1 figure 19. sot-223 mechanical data drawing table 9. sot-223 mechanical data dim. mm min. typ. max. a 1.80 a1 0.02 0.1 b 0.60 0.70 0.85 b1 2.90 3.00 3.15 c 0.24 0.26 0.35 d 6.30 6.50 6.70 e2.30 e1 4.60 e 3.30 3.50 3.70 h 6.70 7.00 7.30 v 10 0046067_m
STN1NF20 revision history doc id 022321 rev 1 11/12 5 revision history table 10. document revision history date revision changes 04-nov-2011 1 first release.
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